Conference Will Start In ICP2DC4 The 4 th International Conference on Physics of 2D Crystals will take place in Hangzhou (China) from 10 th of June to 15 th of June 2019. ICP2DC4 will cover a variety of topics ranging from fundamental physics to applications of new two-dimensional crystals and crystal structures including: Graphene , Boron nitride , Transition metal dichalcogenides (MoS2, WS2, ...) , Hybrid Perovskite , Photonic crystal , BN nanophotonics . 2017 Edition - Vietnam Read More 2018 Edition - Malta Read More 2019 Edition - China Hangzhou grew to prominence as the southern terminus of the Grand Canal and has been one of the most renowned and prosperous cities in China for much of the last millennium... Read More Zhejiang Hotel Hangzhou - China June 10 - 15, 2019 09:00 AM – 06:00 PM 30+ Invited Speakers Don’t miss them 32 Available Seats ICP2DC4 Schedule Download Program Download Booklet program last update: June 5, 2019 Monday 10 June Tuesday 11 June Wednesday 12 June Thursday 13 June Friday 14 June Saturday 15 June Arrival Day 09:00 | CHAIRMAN Opening Ceremony Alexey Kavokin 09:20 | PLENARY Excitons in quantum dots for advanced light sources with photonic nanostructures Yasuhiko Arakawa Semiconductor quantum dots (QDs) in photonic crystals (PhCs) are one of the most fascinating platforms for exploring the physics of light matter interactions in the solid state as well as for developing novel quantum optoelectronic devices. The PhC structure enables an advanced control of the vacuum field, resulting in a substantial modification of its interaction with the excitons in the QDs. We have been working on excitons and polaritons in QDs with 1D, 2D and 3D PhC nanocavities for investigating light-matter interaction and light sources application. In this presentation, we discuss advances in excitons and polaritons in the QDs with photonic nanostrcutures, including time-domain measurement of the vacuum Rabi oscillation in a QD-nanocavity coupled system. We also discuss quantum dot light sources with QDs, such as topological nanocavity lasers, nanowire lasers and single-photon sources integrated on a CMOS silicon photonic chip. Photonic Crystals and Structures 10:00 | INVITED t.b.d Zhanghai Chen Photonic Crystals and Structures 11:00 | INVITED Synthesis of boron nitride and other 2D single crystals under high pressure Takashi Taniguchi The attractive potential of hexagonal boron nitride (hBN) as wide-band gap materials was realized after obtaining high quality single crystals by using high pressure synthesis process. Taking advantage of the highly luminous properties of hBN, a stableoperation of far ultraviolet -plane-emission device was demonstrated. It is also emphasized that hBN exhibits superior properties as a substrate of graphene devices. In order torealize these newly developed potential of hBN crystals, more preciseinsight for its quality control is important. Although the major impurities affects the optical properties of hBN are carbon and oxygen, the details of their contribution are still the subject of study. For the application of graphene’s substrates, some unknown point defects in hBN are considered to still affect its device qualities.In order to figure out this issue, this paper focus onaspatial distribution of residual carbon impurity within hBN single crystals and modification of their properties depend upon post heat treatments. Another issue is to fabricate fine hBN crystals with high quality via conventional route. Although high pressure synthesis process has an advantage to use reactive alkali-base solvent such as Ba-BN, search for the alternative synthesis route without pressure is important for the practical application of hBN. Since hBN is thermodynamically stable at high temperatures and at atmospheric pressure, it should be possible to obtain high-quality hBN crystals at atmospheric pressure by using an appropriate solvent. Ni or Co-base metal base solvents seem useful to obtain high quality hBN crystals, though the yield of the crystals is less than those of high pressure process. On the other hands, liquid phase crystal growth process is also applicable for other 2D materials such as graphite, black phosphor (BP) and TMDs.Also, controlling of boron and nitrogen isotope ratio (10B,11B and 15N) in hBN and cBN crystals can be now carried out by methatheisis reaction under HPHT. In this paper, recent studies for synthesis of BN and other 2D single crystals underhigh pressure with respect to impurity control will be reported. Particularly the present issue to improve properties of BN further is to eliminate residual carbon and oxygen impurities. Furthermore, recent challenge for obtaining boron and nitrogen isotope control of BN crystals will also be introduced. Technology of Thin Crystals 11:30 | INVITED Improvement in the luminescence property of hexagonal boron nitride grown by CVD on a c-plane sapphire substrate Kazuhiko Hara Hexagonal boron nitride (h-BN), which has a graphite-like crystal structure with stacked honeycomb sheets of boron and nitrogen, is expected to be one of the key materials in the future electronics devices. Its unique crystallographic property, excellent electric insulation and efficient luminescence at 215 nm have proven the potential as a substrate and an insulating layer for Van der Waals heterostructures, a light emitting material for the deep ultraviolet region and so on. Aiming at the development of such devices, we have paid attention to the growth of h-BN thin films on a c-plane sapphire substrate by chemical vapor deposition (CVD) with BCl3 and NH3 as boron and nitrogen sources, respectively. This source combination, which has been used to fabricate pyrolytic BN, is expected to be suitable for fast growth of h-BN on a large-size substrate. We were also motivated by the observation of intrinsic excitonic emission at room temperature from h-BN films grown on a nickel substrate by CVD with the same source combination. […]